MJD31CITU
Description: 3.0 A, 100 V NPN Bipolar Power Transistor, 5040-TUBE

Overview of MJD31CITU by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for MJD31CITU by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # MJD31CITU
Avnet Americas Trans GP BJT NPN 100V 3A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: MJD31CITU) RoHS: Compliant Min Qty: 1781 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 39340 Partner Stock
  • 1,781 $0.2078
  • 1,800 $0.2022
  • 3,600 $0.1966
  • 9,000 $0.1909
  • 18,000 $0.1853
  • 90,000 $0.1797
  • 180,000 $0.1741
$0.1741 / $0.2078 Buy Now

CAD Models for MJD31CITU by onsemi
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Part Data Attributes for MJD31CITU by onsemi

MJD31CITU
onsemi
-
-
Pbfree Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ONSEMI
Package Description
IPAK-3
Manufacturer Package Code
369AR
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Collector Current-Max (IC)
3 A
Collector-Emitter Voltage-Max
100 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
10
JEDEC-95 Code
TO-251
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
15 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
3 MHz
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    3.0 A, 100 V NPN Bipolar Power Transistor, 5040-TUBE
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