There are no models available for this part yet.
Overview of MJD31CITU by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for MJD31CITU by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
MJD31CITU
|
Avnet Americas | Trans GP BJT NPN 100V 3A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: MJD31CITU) RoHS: Compliant Min Qty: 1781 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 39340 Partner Stock |
|
$0.1741 / $0.2078 | Buy Now |
CAD Models for MJD31CITU by onsemi
Part Data Attributes for MJD31CITU by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ONSEMI
|
Package Description
|
IPAK-3
|
Manufacturer Package Code
|
369AR
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
onsemi
|
Collector Current-Max (IC)
|
3 A
|
Collector-Emitter Voltage-Max
|
100 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
10
|
JEDEC-95 Code
|
TO-251
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
NPN
|
Power Dissipation-Max (Abs)
|
15 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
3 MHz
|
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