Datasheets
MJD31CITU by:

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, LEAD FREE, IPAK-3

Part Details for MJD31CITU by Fairchild Semiconductor Corporation

Overview of MJD31CITU by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for MJD31CITU

Part # Distributor Description Stock Price Buy
DISTI # 2156-MJD31CITU-ND
DigiKey TRANS NPN 100V 3A IPAK Min Qty: 1480 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 60438
In Stock
  • 1,480 $0.2000
$0.2000 Buy Now
Rochester Electronics MJD31 - Power Bipolar Transistor, 3A, 100V, NPN, TO-251, 3 Pin ' RoHS: Compliant Status: Obsolete Min Qty: 1 60438
  • 1 $0.2048
  • 25 $0.2007
  • 100 $0.1925
  • 500 $0.1843
  • 1,000 $0.1741
$0.1741 / $0.2048 Buy Now
Chip1Cloud TRANS NPN 100V 3A IPAK 12200
RFQ

Part Details for MJD31CITU

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MJD31CITU Part Data Attributes:

MJD31CITU Fairchild Semiconductor Corporation
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MJD31CITU Fairchild Semiconductor Corporation Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, LEAD FREE, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-251
Package Description IPAK-3
Pin Count 3
Manufacturer Package Code TO251 (IPAK) MOLDED,3 LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1.56 W
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz
VCEsat-Max 1.2 V

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