Part Details for MJD31CITU by Fairchild Semiconductor Corporation
Overview of MJD31CITU by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for MJD31CITU
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MJD31CITU-ND
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DigiKey | TRANS NPN 100V 3A IPAK Min Qty: 1480 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
60438 In Stock |
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$0.2000 | Buy Now |
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Rochester Electronics | MJD31 - Power Bipolar Transistor, 3A, 100V, NPN, TO-251, 3 Pin ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 60438 |
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$0.1741 / $0.2048 | Buy Now |
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Chip1Cloud | TRANS NPN 100V 3A IPAK | 12200 |
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RFQ |
Part Details for MJD31CITU
MJD31CITU CAD Models
MJD31CITU Part Data Attributes:
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MJD31CITU
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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MJD31CITU
Fairchild Semiconductor Corporation
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, LEAD FREE, IPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-251 | |
Package Description | IPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO251 (IPAK) MOLDED,3 LEAD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1.56 W | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz | |
VCEsat-Max | 1.2 V |