Datasheets
MJD122G by: onsemi

8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD122G by onsemi

Results Overview of MJD122G by onsemi

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

MJD122G Information

MJD122G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD122G

Part # Distributor Description Stock Price Buy
DISTI # 42K1269
Newark Bipolar Transistor, Npn, 100V, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, ... Power Dissipation Pd:1.75W, Dc Collector Current:8A, Rf Transistor Case:To-252 (Dpak), No. Of Pins:3Pins, Dc Current Gain Hfe:12Hfe Rohs Compliant: Yes |Onsemi MJD122G more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 412
  • 1 $1.0800
  • 10 $1.0100
  • 150 $0.5800
  • 525 $0.5370
  • 1,050 $0.4930
  • 2,550 $0.4330
  • 10,050 $0.4080
$0.4080 / $1.0800 Buy Now
DISTI # MJD122GOS-ND
DigiKey TRANS NPN DARL 100V 8A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Tube 4706
In Stock
  • 1 $1.6200
  • 75 $0.7177
  • 150 $0.6425
  • 525 $0.5353
  • 1,050 $0.4889
  • 2,025 $0.4517
  • 5,025 $0.4094
  • 10,050 $0.3921
$0.3921 / $1.6200 Buy Now
DISTI # MJD122G
Avnet Americas Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Rail/Tube (Alt:... MJD122G) more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 787
  • 1 $0.4026
  • 10 $0.4005
  • 30 $0.3984
  • 50 $0.3963
  • 100 $0.3847
$0.3847 / $0.4026 Buy Now
DISTI # 42K1269
Avnet Americas Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Bulk (Alt: 42K1... 269) more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 1 Days Container: Bulk 604 Partner Stock
  • 1 $1.0800
  • 10 $1.0100
  • 150 $0.5800
  • 525 $0.5370
  • 1,050 $0.4930
$0.4930 / $1.0800 Buy Now
DISTI # 863-MJD122G
Mouser Electronics Darlington Transistors 8A 100V Bipolar Power NPN RoHS: Compliant 1816
  • 1 $1.2300
  • 10 $1.1500
  • 75 $0.5320
  • 525 $0.4840
  • 1,050 $0.4140
  • 2,700 $0.3990
  • 10,800 $0.3920
$0.3920 / $1.2300 Buy Now
DISTI # V36:1790_07304024
Arrow Electronics Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Lead time: 12 Weeks Date Code: 2430 Americas - 770
  • 75 $0.5066
  • 525 $0.4815
  • 1,050 $0.3934
  • 2,700 $0.3770
$0.3770 / $0.5066 Buy Now
Future Electronics MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube 653
Tube
  • 1 $0.4250
  • 75 $0.4150
  • 250 $0.4050
  • 750 $0.3950
  • 2,500 $0.3750
$0.3750 / $0.4250 Buy Now
Future Electronics MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2700 Package Multiple: 75 Lead time: 12 Weeks Container: Tube 0
Tube
  • 1 $0.4250
  • 75 $0.4150
  • 250 $0.4050
  • 750 $0.3950
  • 2,500 $0.3750
$0.3750 / $0.4250 Buy Now
Future Electronics MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2700 Package Multiple: 75 Lead time: 12 Weeks Container: Tube 0
Tube
  • 1 $0.4250
  • 75 $0.4150
  • 250 $0.4050
  • 750 $0.3950
  • 2,500 $0.3750
$0.3750 / $0.4250 Buy Now
Future Electronics MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 61 Lead time: 12 Weeks Container: Tube 0
Tube
  • 1 $0.4150
  • 75 $0.4050
  • 250 $0.3950
  • 750 $0.3850
  • 2,500 $0.3700
$0.3700 / $0.4150 Buy Now
DISTI # 87022658
Verical Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube Min Qty: 150 Package Multiple: 75 Date Code: 2438 Americas - 5025
  • 150 $0.6087
  • 300 $0.5825
  • 1,050 $0.5511
  • 2,550 $0.5229
  • 5,025 $0.5149
$0.5149 / $0.6087 Buy Now
DISTI # 84462831
Verical Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube Min Qty: 75 Package Multiple: 75 Date Code: 2430 Americas - 750
  • 75 $0.5066
  • 525 $0.4815
  • 1,050 $0.3934
  • 2,700 $0.3770
$0.3770 / $0.5066 Buy Now
Bristol Electronics   Min Qty: 5 473
  • 5 $1.1250
  • 19 $0.7313
  • 70 $0.4219
  • 239 $0.3600
$0.3600 / $1.1250 Buy Now
Quest Components 8 A, 100 V, NPN, SI, POWER TRANSISTOR 318
  • 1 $1.5000
  • 18 $0.7500
  • 81 $0.4500
$0.4500 / $1.5000 Buy Now
DISTI # MJD122G
TME Transistor: NPN, bipolar, Darlington, 100V, 8A, 1.75W, DPAK Min Qty: 1 170
  • 1 $0.8330
  • 5 $0.7500
  • 25 $0.6620
  • 150 $0.5950
  • 750 $0.5360
$0.5360 / $0.8330 Buy Now
ComSIT USA NPN DARLINGTON POWER TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATION Power Bipolar Transistor, 8A I(C)... , 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin more RoHS: Compliant Stock DE - 1479
Stock ES - 28
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # MJD122G
Avnet Asia Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 1650 Package Multiple: 75 Lead time: 12 Weeks, 0 Days 0
  • 1,650 $0.4128
  • 3,300 $0.4074
  • 4,950 $0.4022
  • 8,250 $0.3971
  • 16,500 $0.3873
  • 41,250 $0.3780
  • 82,500 $0.3691
$0.3691 / $0.4128 Buy Now
DISTI # MJD122G
Avnet Silica Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days Silica - 1800
Buy Now
DISTI # C1S541900168488
Chip One Stop Trans Darlington NPN 100V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube Container: Tube 48
  • 1 $0.9840
  • 10 $0.9200
$0.9200 / $0.9840 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 30
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
DISTI # MJD122G
EBV Elektronik Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days EBV - 450
Buy Now
LCSC 100V 10004V4A NPN 8A 20W TO-252-2(DPAK) Darlington Transistors ROHS 481
  • 1 $0.9960
  • 10 $0.8246
  • 30 $0.7390
  • 75 $0.5829
  • 525 $0.5309
  • 975 $0.5049
$0.5049 / $0.9960 Buy Now
Master Electronics Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin RoHS: Compliant 5025 In Stock
  • 75 $0.4682
  • 300 $0.4481
  • 1,050 $0.4239
  • 2,550 $0.4022
  • 5,025 $0.3961
  • 7,500 $0.3902
  • 10,050 $0.3844
  • 15,000 $0.3786
$0.3786 / $0.4682 Buy Now
New Advantage Corporation MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 75 600
  • 300 $0.6071
  • 600 $0.5667
$0.5667 / $0.6071 Buy Now
Win Source Electronics Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube / TRANS NPN DARL 100V 8A DPAK 2533
  • 45 $1.2166
  • 105 $0.9983
  • 160 $0.9671
  • 215 $0.9359
  • 280 $0.9047
  • 370 $0.8111
$0.8111 / $1.2166 Buy Now

Part Details for MJD122G

MJD122G CAD Models

MJD122G Part Data Attributes

MJD122G onsemi
Buy Now Datasheet
Compare Parts:
MJD122G onsemi 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 15 Weeks, 1 Day
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

Alternate Parts for MJD122G

This table gives cross-reference parts and alternative options found for MJD122G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD122 Micro Commercial Components Check for Price Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3 MJD122G vs MJD122
Part Number Manufacturer Composite Price Description Compare
MJD122T4 onsemi Check for Price 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD122G vs MJD122T4
MJD122 WEITRON INTERNATIONAL CO., LTD. Check for Price Power Bipolar Transistor MJD122G vs MJD122
KSH122TF Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 MJD122G vs KSH122TF
MJD122 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 MJD122G vs MJD122
MJD122 onsemi Check for Price 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD122G vs MJD122
NJVMJD122T4G onsemi Check for Price 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified MJD122G vs NJVMJD122T4G
KSH122TM Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 MJD122G vs KSH122TM
MJD122T4G onsemi $0.4360 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD122G vs MJD122T4G
MJD122T4 STMicroelectronics $0.3896 Low voltage NPN power Darlington transistor MJD122G vs MJD122T4

MJD122G Related Parts

MJD122G Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJD122G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating in the saturation region for extended periods.

  • To ensure the MJD122G is properly biased for linear operation, it's essential to set the quiescent current (Iq) to the recommended value, typically around 10-20 mA. This can be achieved by adjusting the base resistor (Rb) and emitter resistor (Re) values. Additionally, ensure the collector-emitter voltage (Vce) is within the recommended range, typically around 10-20 V.

  • For optimal performance and thermal management, it's recommended to use a multi-layer PCB with a solid ground plane, and to place the MJD122G near a heat sink or thermal pad. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal interface materials (TIMs) if necessary. Follow standard PCB design guidelines for high-power devices, such as using wide traces and minimizing thermal resistance.

  • To protect the MJD122G from electrostatic discharge (ESD), follow standard ESD protection guidelines, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD-protective workstations. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design.

  • Follow standard soldering and assembly guidelines for high-power devices, such as using a controlled soldering iron temperature (around 250°C), and ensuring the device is properly secured to the PCB using a suitable adhesive or mechanical fastening. Avoid overheating the device during soldering, and ensure the PCB is designed to accommodate the device's thermal and mechanical stresses.