Datasheets
MJD112T4 by:
onsemi
Continental Device India Ltd
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
STMicroelectronics
Not Found

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Part Details for MJD112T4 by onsemi

Results Overview of MJD112T4 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

MJD112T4 Information

MJD112T4 by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD112T4

Part # Distributor Description Stock Price Buy
Bristol Electronics   4490
RFQ
Bristol Electronics   184
RFQ
Quest Components 2A, 100V, NPN, SI, POWER TRANSISTOR 3244
  • 1 $0.6000
  • 201 $0.1800
  • 1,112 $0.1560
$0.1560 / $0.6000 Buy Now
Quest Components 2A, 100V, NPN, SI, POWER TRANSISTOR 316
  • 1 $1.1000
  • 24 $0.6600
  • 92 $0.5500
$0.5500 / $1.1000 Buy Now

Part Details for MJD112T4

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MJD112T4 Part Data Attributes

MJD112T4 onsemi
Buy Now Datasheet
Compare Parts:
MJD112T4 onsemi 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description PLASTIC, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for MJD112T4

This table gives cross-reference parts and alternative options found for MJD112T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJD112RL onsemi Check for Price 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL MJD112T4 vs MJD112RL
Part Number Manufacturer Composite Price Description Compare
MJD112G onsemi $0.3224 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE MJD112T4 vs MJD112G
MJD112 STMicroelectronics Check for Price 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 MJD112T4 vs MJD112
NJVMJD112G onsemi $0.4870 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK-3, 75-TUBE, Automotive Qualified MJD112T4 vs NJVMJD112G
MJD112T4 STMicroelectronics $0.3505 Low voltage NPN power Darlington transistor MJD112T4 vs MJD112T4
FZT605 Wurth Elektronik Check for Price Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, MJD112T4 vs FZT605
NJVMJD112T4G onsemi $0.4380 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified MJD112T4 vs NJVMJD112T4G

MJD112T4 Related Parts

MJD112T4 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJD112T4 is not explicitly stated in the datasheet. However, it's recommended to follow the SOA curves provided in the onsemi application note AND8193/D to ensure safe operation.

  • Proper thermal management is crucial for the MJD112T4. Ensure a good thermal interface between the device and the heat sink, and follow the thermal resistance calculations outlined in the datasheet. A thermal pad or thermal interface material can be used to improve heat transfer.

  • A good PCB layout for the MJD112T4 should minimize lead inductance and ensure a low-impedance path for the drain and source pins. Use a solid copper plane for the drain and source connections, and keep the gate and source pins close together. Refer to the onsemi application note AND8193/D for more guidance.

  • Yes, the MJD112T4 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation, and follow the guidelines in the onsemi application note AND8193/D.

  • The MJD112T4 is sensitive to electrostatic discharge (ESD). Handle the device with ESD-safe materials, and follow proper ESD protection procedures during assembly and testing. Use ESD protection devices, such as TVS diodes, if necessary.