Datasheets
MJD112G by: onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD112G by onsemi

Results Overview of MJD112G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

MJD112G Information

MJD112G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD112G

Part # Distributor Description Stock Price Buy
DISTI # 58M9087
Newark Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 25 Mhz, 1.75 W, 2 A, 12000 Rohs Compliant: Yes |Onsemi MJD112G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 3117
  • 1 $0.7280
  • 10 $0.7090
  • 150 $0.2780
  • 525 $0.2610
  • 1,050 $0.2430
  • 2,550 $0.2180
$0.2180 / $0.7280 Buy Now
DISTI # MJD112GOS-ND
DigiKey TRANS NPN DARL 100V 2A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube 1508
In Stock
  • 1 $1.0400
  • 75 $0.4444
  • 150 $0.3948
  • 525 $0.3240
  • 1,050 $0.2933
  • 2,025 $0.2686
  • 5,025 $0.2406
  • 10,050 $0.2231
$0.2231 / $1.0400 Buy Now
DISTI # MJD112G
Avnet Americas Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK Rail - Rail/Tube (Alt: MJD112G) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube 1742
  • 1 $0.1982
  • 10 $0.1955
  • 30 $0.1927
  • 50 $0.1899
  • 100 $0.1871
$0.1871 / $0.1982 Buy Now
DISTI # 863-MJD112G
Mouser Electronics Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant 8085
  • 1 $0.7000
  • 10 $0.6820
  • 75 $0.2810
  • 525 $0.2540
  • 1,050 $0.2450
  • 9,900 $0.2140
  • 27,225 $0.2130
$0.2130 / $0.7000 Buy Now
Future Electronics MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 75 Package Multiple: 75 Lead time: 10 Weeks Container: Tube 6300
Tube
  • 75 $0.2250
  • 300 $0.2150
  • 1,125 $0.2100
  • 5,625 $0.2000
$0.2000 / $0.2250 Buy Now
Future Electronics MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 10 Weeks Container: Tube 0
Tube
  • 75 $0.2250
  • 300 $0.2150
  • 1,125 $0.2100
  • 5,625 $0.2000
$0.2000 / $0.2250 Buy Now
Onlinecomponents.com Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK RoHS: Compliant 2175 In Stock
  • 75 $0.2515
  • 525 $0.2407
  • 2,550 $0.2277
  • 5,025 $0.2160
  • 7,500 $0.2128
  • 25,050 $0.2080
  • 50,025 $0.2049
$0.2049 / $0.2515 Buy Now
Bristol Electronics   275
RFQ
Quest Components POWER BIPOLAR TRANSISTOR, 2A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 2 PIN 1260
  • 1 $2.1050
  • 191 $0.8420
  • 951 $0.7368
$0.7368 / $2.1050 Buy Now
Quest Components POWER BIPOLAR TRANSISTOR, 2A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 2 PIN 220
  • 1 $0.7875
  • 33 $0.4725
  • 128 $0.3938
$0.3938 / $0.7875 Buy Now
DISTI # MJD112G
TME Transistor: NPN, bipolar, Darlington, 100V, 2A, 1.75W, DPAK Min Qty: 1 60
  • 1 $0.8000
  • 5 $0.4410
  • 25 $0.3970
  • 75 $0.3510
  • 300 $0.3150
$0.3150 / $0.8000 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 662
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # MJD112G
Avnet Silica Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK Rail (Alt: MJD112G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 11 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MJD112G
EBV Elektronik Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK Rail (Alt: MJD112G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 12 Weeks, 0 Days EBV - 2175
Buy Now
Flip Electronics Stock, ship today 150
RFQ
Master Electronics Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK RoHS: Compliant 2175 In Stock
  • 75 $0.2515
  • 525 $0.2407
  • 2,550 $0.2277
  • 5,025 $0.2160
  • 7,500 $0.2128
  • 25,050 $0.2080
  • 50,025 $0.2049
$0.2049 / $0.2515 Buy Now
New Advantage Corporation MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 75 13650
  • 525 $0.3143
  • 13,650 $0.2933
$0.2933 / $0.3143 Buy Now
Win Source Electronics TRANS NPN DARL 100V 2A DPAK 56480
  • 95 $0.5492
  • 225 $0.4507
  • 345 $0.4366
  • 475 $0.4225
  • 615 $0.4084
  • 820 $0.3662
$0.3662 / $0.5492 Buy Now

Part Details for MJD112G

MJD112G CAD Models

MJD112G Part Data Attributes

MJD112G onsemi
Buy Now Datasheet
Compare Parts:
MJD112G onsemi 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Select a part to compare:
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for MJD112G

This table gives cross-reference parts and alternative options found for MJD112G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NJVMJD112G onsemi $0.4870 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK-3, 75-TUBE, Automotive Qualified MJD112G vs NJVMJD112G
Part Number Manufacturer Composite Price Description Compare
NJVMJD112T4G onsemi $0.4380 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified MJD112G vs NJVMJD112T4G
MJD112T4G onsemi $0.4263 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL MJD112G vs MJD112T4G

MJD112G Related Parts

MJD112G Frequently Asked Questions (FAQ)

  • The maximum SOA for the MJD112G is typically defined by the voltage and current ratings, but it's essential to consult the datasheet and application notes for specific guidance on SOA to ensure reliable operation.

  • To ensure proper biasing, follow the recommended biasing circuits and voltage ranges outlined in the datasheet and application notes. Additionally, consider the specific requirements of your application and consult with onsemi's technical support if needed.

  • Proper thermal management is crucial for the MJD112G. Ensure adequate heat sinking, follow the recommended thermal resistance guidelines, and consider the maximum junction temperature (Tj) ratings to prevent overheating and ensure reliable operation.

  • Yes, the MJD112G can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as rise and fall times, and ensure the application is within the device's capabilities. Consult the datasheet and application notes for guidance.

  • To protect the MJD112G from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider implementing ESD protection circuits in your design.