Part Details for MJ15012 by Motorola Semiconductor Products
Overview of MJ15012 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MJ15012
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 31 |
|
RFQ | ||
|
|
Quest Components | Bipolar Junction Transistor, PNP Type, TO-204AA | 24 |
|
$5.0000 / $7.5000 | Buy Now |
Part Details for MJ15012
MJ15012 CAD Models
MJ15012 Part Data Attributes:
|
|
MJ15012
Motorola Semiconductor Products
Buy Now
Datasheet
|
Compare Parts:
MJ15012
Motorola Semiconductor Products
Power Bipolar Transistor, 10A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Base Capacitance-Max | 750 pF | |
| Collector-Emitter Voltage-Max | 250 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.5 V |