Part Details for MJ10016 by NTE Electronics Inc
Overview of MJ10016 by NTE Electronics Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for MJ10016
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
21M5145
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Newark | Bipolar Transistor, Npn, 500V, Transistor Polarity:Npn, No. Of Pins:2Pins, Transistor Mounting:Through Hole, Operating Temperature Max:200°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:500V Rohs Compliant: Yes |Nte Electronics MJ10016 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for MJ10016
MJ10016 CAD Models
MJ10016 Part Data Attributes:
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MJ10016
NTE Electronics Inc
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Datasheet
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MJ10016
NTE Electronics Inc
Transistor,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NTE ELECTRONICS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 50 A | |
Collector-Base Capacitance-Max | 750 pF | |
Collector-Emitter Voltage-Max | 700 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 10 | |
Fall Time-Max (tf) | 1000 ns | |
JEDEC-95 Code | TO-3 | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 250 W | |
Rise Time-Max (tr) | 1000 ns | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 3500 ns | |
Turn-on Time-Max (ton) | 1300 ns | |
VCEsat-Max | 5 V |