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MIXA80R1200VA by:

Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES,

Part Details for MIXA80R1200VA by IXYS Corporation

Overview of MIXA80R1200VA by IXYS Corporation

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Price & Stock for MIXA80R1200VA

Part # Distributor Description Stock Price Buy
DISTI # MIXA80R1200VA-ND
DigiKey IGBT MOD 1200V 120A 390W V1A-PAK Min Qty: 24 Lead time: 72 Weeks Container: Box Temporarily Out of Stock
  • 24 $26.4579
$26.4579 Buy Now
DISTI # 747-MIXA80R1200VA
Mouser Electronics IGBT Modules Boost/Brake Module XPT IGBT RoHS: Compliant 0
  • 24 $26.4600
$26.4600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks Container: Box 0
Box
  • 24 $22.3800
$22.3800 Buy Now
DISTI # MIXA80R1200VA
TTI IGBT Modules Boost/Brake Module XPT IGBT Min Qty: 24 Package Multiple: 24 Container: Box Americas - 0
  • 24 $25.6700
$25.6700 Buy Now
DISTI # MIXA80R1200VA
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, 390W Min Qty: 1 0
  • 1 $30.8900
  • 3 $27.3000
  • 10 $24.4700
  • 24 $22.8400
$22.8400 / $30.8900 RFQ
New Advantage Corporation IGBT MOD.DIODE SINGLE 84A 1200V XPT V1-A-PACK RoHS: Compliant Min Qty: 1 Package Multiple: 1 26
  • 8 $44.4600
  • 26 $41.5000
$41.5000 / $44.4600 Buy Now

Part Details for MIXA80R1200VA

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MIXA80R1200VA Part Data Attributes

MIXA80R1200VA IXYS Corporation
Buy Now Datasheet
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MIXA80R1200VA IXYS Corporation Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description MODULE-8
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 120 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X8
Number of Elements 1
Number of Terminals 8
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 110 ns
VCEsat-Max 2.2 V

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