Part Details for MIXA80R1200VA by IXYS Corporation
Overview of MIXA80R1200VA by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MIXA80R1200VA
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MIXA80R1200VA-ND
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DigiKey | IGBT MOD 1200V 120A 390W V1A-PAK Min Qty: 24 Lead time: 72 Weeks Container: Box | Temporarily Out of Stock |
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$26.4579 | Buy Now |
DISTI #
747-MIXA80R1200VA
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Mouser Electronics | IGBT Modules Boost/Brake Module XPT IGBT RoHS: Compliant | 0 |
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$26.4600 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks Container: Box | 0Box |
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$22.3800 | Buy Now |
DISTI #
MIXA80R1200VA
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TTI | IGBT Modules Boost/Brake Module XPT IGBT Min Qty: 24 Package Multiple: 24 Container: Box | Americas - 0 |
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$25.6700 | Buy Now |
DISTI #
MIXA80R1200VA
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TME | Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, 390W Min Qty: 1 | 0 |
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$22.8400 / $30.8900 | RFQ |
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New Advantage Corporation | IGBT MOD.DIODE SINGLE 84A 1200V XPT V1-A-PACK RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 26 |
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$41.5000 / $44.4600 | Buy Now |
Part Details for MIXA80R1200VA
MIXA80R1200VA CAD Models
MIXA80R1200VA Part Data Attributes
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MIXA80R1200VA
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
MIXA80R1200VA
IXYS Corporation
Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | MODULE-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 120 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 390 W | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 350 ns | |
Turn-on Time-Nom (ton) | 110 ns | |
VCEsat-Max | 2.2 V |