Part Details for MIG10Q805H by Toshiba America Electronic Components
Overview of MIG10Q805H by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MIG10Q805H
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ComSIT USA | SILICON N CHANNEL INTEGRATED IGBT MODULE Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel RoHS: Not Compliant |
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RFQ |
Part Details for MIG10Q805H
MIG10Q805H CAD Models
MIG10Q805H Part Data Attributes
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MIG10Q805H
Toshiba America Electronic Components
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Datasheet
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MIG10Q805H
Toshiba America Electronic Components
TRANSISTOR 10 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE | |
| JESD-30 Code | R-XDIP-T20 | |
| Number of Elements | 6 | |
| Number of Terminals | 20 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 150 ns |