Datasheets
MGSF3454VT1 by:

4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6

Part Details for MGSF3454VT1 by Motorola Mobility LLC

Overview of MGSF3454VT1 by Motorola Mobility LLC

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Part Details for MGSF3454VT1

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MGSF3454VT1 Part Data Attributes:

MGSF3454VT1 Motorola Mobility LLC
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MGSF3454VT1 Motorola Mobility LLC 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MGSF3454VT1

This table gives cross-reference parts and alternative options found for MGSF3454VT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGSF3454VT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MGSF3454VT3 Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Motorola Semiconductor Products MGSF3454VT1 vs MGSF3454VT3
Part Number Description Manufacturer Compare
IRFR4615PBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615PBF
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615TRLPBF
IRFR4615TRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG MGSF3454VT1 vs IRFR4615TRPBF
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG MGSF3454VT1 vs IRFR4615TRRPBF
RTQ045N03TR Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN ROHM Semiconductor MGSF3454VT1 vs RTQ045N03TR
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615TRRPBF
RTQ045N03 Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT, 6 PIN ROHM Semiconductor MGSF3454VT1 vs RTQ045N03
MGSF3454VT3 Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Motorola Semiconductor Products MGSF3454VT1 vs MGSF3454VT3

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