Part Details for MGFC45V5867 by Mitsubishi Electric
Overview of MGFC45V5867 by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MGFC45V5867
MGFC45V5867 CAD Models
MGFC45V5867 Part Data Attributes
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MGFC45V5867
Mitsubishi Electric
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Datasheet
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MGFC45V5867
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 10 V | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for MGFC45V5867
This table gives cross-reference parts and alternative options found for MGFC45V5867. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFC45V5867, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MGFC45B3436B | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETICALLY SEALED, 2 PIN | Mitsubishi Electric | MGFC45V5867 vs MGFC45B3436B |