Part Details for MGFC44V3642 by Mitsubishi Electric
Results Overview of MGFC44V3642 by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MGFC44V3642 Information
MGFC44V3642 by Mitsubishi Electric is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MGFC44V3642
MGFC44V3642 CAD Models
MGFC44V3642 Part Data Attributes
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MGFC44V3642
Mitsubishi Electric
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Datasheet
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MGFC44V3642
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 10 V | |
Drain Current-Max (ID) | 6.4 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 93 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for MGFC44V3642
This table gives cross-reference parts and alternative options found for MGFC44V3642. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFC44V3642, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MGFC44V3642-51 | Mitsubishi Electric | Check for Price | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | MGFC44V3642 vs MGFC44V3642-51 |
MGFC44V3642-01 | Mitsubishi Electric | Check for Price | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | MGFC44V3642 vs MGFC44V3642-01 |