Datasheets
MGFC44V3642 by: Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN

Part Details for MGFC44V3642 by Mitsubishi Electric

Results Overview of MGFC44V3642 by Mitsubishi Electric

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Applications Space Technology Aerospace and Defense Telecommunications

MGFC44V3642 Information

MGFC44V3642 by Mitsubishi Electric is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MGFC44V3642

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MGFC44V3642 Part Data Attributes

MGFC44V3642 Mitsubishi Electric
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MGFC44V3642 Mitsubishi Electric RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
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Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 10 V
Drain Current-Max (ID) 6.4 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 93 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for MGFC44V3642

This table gives cross-reference parts and alternative options found for MGFC44V3642. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFC44V3642, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MGFC44V3642-51 Mitsubishi Electric Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET MGFC44V3642 vs MGFC44V3642-51
MGFC44V3642-01 Mitsubishi Electric Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET MGFC44V3642 vs MGFC44V3642-01