Part Details for MGFC39V3742A by Mitsubishi Electric
Overview of MGFC39V3742A by Mitsubishi Electric
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Part Details for MGFC39V3742A
MGFC39V3742A CAD Models
MGFC39V3742A Part Data Attributes
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MGFC39V3742A
Mitsubishi Electric
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Datasheet
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MGFC39V3742A
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 10 V | |
| Drain Current-Max (ID) | 2.4 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 43 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for MGFC39V3742A
This table gives cross-reference parts and alternative options found for MGFC39V3742A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFC39V3742A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MGFC39V3742-01 | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN | Mitsubishi Electric | MGFC39V3742A vs MGFC39V3742-01 |
| MGFC39V3742A-01 | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | Mitsubishi Electric | MGFC39V3742A vs MGFC39V3742A-01 |