Part Details for MGFC38V5867 by Mitsubishi Electric
Overview of MGFC38V5867 by Mitsubishi Electric
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Part Details for MGFC38V5867
MGFC38V5867 CAD Models
MGFC38V5867 Part Data Attributes
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MGFC38V5867
Mitsubishi Electric
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Datasheet
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MGFC38V5867
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 10 V | |
| Drain Current-Max (ID) | 1.8 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 30 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |