Part Details for MGFC1801-A01 by Mitsubishi Electric
Overview of MGFC1801-A01 by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MGFC1801-A01
MGFC1801-A01 CAD Models
MGFC1801-A01 Part Data Attributes:
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MGFC1801-A01
Mitsubishi Electric
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Datasheet
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MGFC1801-A01
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N13 | |
Pin Count | 13 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 6 V | |
Drain Current-Max (ID) | 0.1 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | X BAND | |
JESD-30 Code | R-XUUC-N13 | |
Number of Elements | 1 | |
Number of Terminals | 13 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for MGFC1801-A01
This table gives cross-reference parts and alternative options found for MGFC1801-A01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFC1801-A01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MGFC1801-A02 | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 | Mitsubishi Electric | MGFC1801-A01 vs MGFC1801-A02 |
MGFC1801-T03 | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 | Mitsubishi Electric | MGFC1801-A01 vs MGFC1801-T03 |
MGFC1801-A13 | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 | Mitsubishi Electric | MGFC1801-A01 vs MGFC1801-A13 |
MGFC1801-T02 | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 | Mitsubishi Electric | MGFC1801-A01 vs MGFC1801-T02 |