Part Details for MGF4941AL by Mitsubishi Electric
Overview of MGF4941AL by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Space Technology
Telecommunications
Price & Stock for MGF4941AL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | SUPER LOW NOISE InGaAs HEMT | 24000 |
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RFQ |
Part Details for MGF4941AL
MGF4941AL CAD Models
MGF4941AL Part Data Attributes:
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MGF4941AL
Mitsubishi Electric
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Datasheet
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MGF4941AL
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, P-Channel, High Electron Mobility FET, GD-32, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | SMALL OUTLINE, S-XQSO-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.06 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | S-XQSO-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 0.05 W | |
| Power Gain-Min (Gp) | 12 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |