Part Details for MGF4316G by Mitsubishi Electric
Overview of MGF4316G by Mitsubishi Electric
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Part Details for MGF4316G
MGF4316G CAD Models
MGF4316G Part Data Attributes:
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MGF4316G
Mitsubishi Electric
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MGF4316G
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | DISK BUTTON, O-CRDB-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | LOW NOISE | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 0.06 A | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | K BAND | |
JESD-30 Code | O-CRDB-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.05 W | |
Power Gain-Min (Gp) | 12 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |