Datasheets
MGF1954A by: Mitsubishi Electric

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4

Part Details for MGF1954A by Mitsubishi Electric

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Applications Telecommunications

MGF1954A Information

MGF1954A by Mitsubishi Electric is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MGF1954A

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MGF1954A Part Data Attributes

MGF1954A Mitsubishi Electric
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MGF1954A Mitsubishi Electric RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4
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Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description CHIP CARRIER, S-CBCC-N4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 6 V
Drain Current-Max (ID) 0.1 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band KU BAND
JESD-30 Code S-CBCC-N4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 125 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style CHIP CARRIER
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Gain-Min (Gp) 3 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE