Part Details for MGF1954A by Mitsubishi Electric
Results Overview of MGF1954A by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MGF1954A Information
MGF1954A by Mitsubishi Electric is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MGF1954A
MGF1954A CAD Models
MGF1954A Part Data Attributes
|
MGF1954A
Mitsubishi Electric
Buy Now
Datasheet
|
Compare Parts:
MGF1954A
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4
Select a part to compare: |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | CHIP CARRIER, S-CBCC-N4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 6 V | |
Drain Current-Max (ID) | 0.1 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | S-CBCC-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1 W | |
Power Gain-Min (Gp) | 3 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |