Part Details for MGF1801B by Mitsubishi Electric
Overview of MGF1801B by Mitsubishi Electric
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Applications
Telecommunications
Part Details for MGF1801B
MGF1801B CAD Models
MGF1801B Part Data Attributes
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MGF1801B
Mitsubishi Electric
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Datasheet
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MGF1801B
Mitsubishi Electric
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-10, 4 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | MICROWAVE, S-CQMW-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 6 V | |
Drain Current-Max (ID) | 0.1 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | X BAND | |
JESD-30 Code | S-CQMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.2 W | |
Power Gain-Min (Gp) | 7 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |