Part Details for MG75J6ES50 by Toshiba America Electronic Components
Overview of MG75J6ES50 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Robotics and Drones
Price & Stock for MG75J6ES50
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 6 |
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RFQ |
Part Details for MG75J6ES50
MG75J6ES50 CAD Models
MG75J6ES50 Part Data Attributes:
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MG75J6ES50
Toshiba America Electronic Components
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Datasheet
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MG75J6ES50
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, 2-94A2A, 19 PIN, Insulated Gate BIP Transistor
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-94A2A, 19 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 300 ns | |
| Gate-Emitter Thr Voltage-Max | 8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X19 | |
| Number of Elements | 6 | |
| Number of Terminals | 19 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 390 W | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 240 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| VCEsat-Max | 2.7 V |
Alternate Parts for MG75J6ES50
This table gives cross-reference parts and alternative options found for MG75J6ES50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG75J6ES50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM75TU-12F | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG75J6ES50 vs CM75TU-12F |
| MWI50-06A7 | Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17 | Littelfuse Inc | MG75J6ES50 vs MWI50-06A7 |
| 6MBI75FA-060 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG75J6ES50 vs 6MBI75FA-060 |
| BSM75GP60 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | MG75J6ES50 vs BSM75GP60 |
| CM75TU-12F | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG75J6ES50 vs CM75TU-12F |
| 6MBI50L-060 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN | Fuji Electric Co Ltd | MG75J6ES50 vs 6MBI50L-060 |
| BSM75GD60DLCBOSA1 | Insulated Gate Bipolar Transistor, 95A I(C), 600V V(BR)CES, N-Channel, MODULE-17 | Infineon Technologies AG | MG75J6ES50 vs BSM75GD60DLCBOSA1 |
| CM75TF-12H | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG75J6ES50 vs CM75TF-12H |
| MG50J6ES1 | TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-94A2A, 19 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG75J6ES50 vs MG50J6ES1 |
| 6MBI50FA-060 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG75J6ES50 vs 6MBI50FA-060 |