Part Details for MG600Q1US51 by Toshiba America Electronic Components
Overview of MG600Q1US51 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG600Q1US51
MG600Q1US51 CAD Models
MG600Q1US51 Part Data Attributes:
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MG600Q1US51
Toshiba America Electronic Components
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Datasheet
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MG600Q1US51
Toshiba America Electronic Components
TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F3A, 4 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-109F3A, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 600 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1200 ns | |
| Turn-on Time-Nom (ton) | 600 ns | |
| VCEsat-Max | 3.6 V |
Alternate Parts for MG600Q1US51
This table gives cross-reference parts and alternative options found for MG600Q1US51. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG600Q1US51, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1MBI300L-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | MG600Q1US51 vs 1MBI300L-120 |
| 2MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | MG600Q1US51 vs 2MBI200S-120 |
| CM100DY-24A | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | MG600Q1US51 vs CM100DY-24A |
| MG500Q1US2 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG600Q1US51 vs MG500Q1US2 |
| CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG600Q1US51 vs CM150DU-24H |
| CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG600Q1US51 vs CM600HA-24H |
| 2MBI150F-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN | Fuji Electric Co Ltd | MG600Q1US51 vs 2MBI150F-120 |
| MG100Q2YS42 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG600Q1US51 vs MG100Q2YS42 |
| 1MBI300N-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | MG600Q1US51 vs 1MBI300N-120 |
| 1MBI400S-120 | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG600Q1US51 vs 1MBI400S-120 |