Part Details for MG50N2YS1 by Toshiba America Electronic Components
Overview of MG50N2YS1 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Part Details for MG50N2YS1
MG50N2YS1 CAD Models
MG50N2YS1 Part Data Attributes:
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MG50N2YS1
Toshiba America Electronic Components
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Datasheet
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MG50N2YS1
Toshiba America Electronic Components
TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, 2-94C1A, 7 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED SWITCHING | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-PUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1100 ns | |
| Turn-on Time-Nom (ton) | 450 ns |
Alternate Parts for MG50N2YS1
This table gives cross-reference parts and alternative options found for MG50N2YS1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG50N2YS1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG75Q2YS1 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50N2YS1 vs MG75Q2YS1 |
| CM50DU-24F | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG50N2YS1 vs CM50DU-24F |
| MG75Q2YS11 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50N2YS1 vs MG75Q2YS11 |
| CM75DY-24H | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG50N2YS1 vs CM75DY-24H |
| MG75Q2YS52 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG50N2YS1 vs MG75Q2YS52 |
| 2MBI75F-120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M216, 7 PIN | Fuji Electric Co Ltd | MG50N2YS1 vs 2MBI75F-120 |
| BSM50GB100D | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, | Siemens | MG50N2YS1 vs BSM50GB100D |
| CM75DU-24F | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | MG50N2YS1 vs CM75DU-24F |
| BSM50GB120DN2 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, | Siemens | MG50N2YS1 vs BSM50GB120DN2 |
| BSM50GB120DN2HOSA1 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG50N2YS1 vs BSM50GB120DN2HOSA1 |