Datasheets
MG50G1BL3 by:
Toshiba America Electronic Components
Hongxing Electrical Ltd
Toshiba America Electronic Components
Not Found

TRANSISTOR 50 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-33C1A, 3 PIN, BIP General Purpose Power

Part Details for MG50G1BL3 by Toshiba America Electronic Components

Results Overview of MG50G1BL3 by Toshiba America Electronic Components

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming Automotive

MG50G1BL3 Information

MG50G1BL3 by Toshiba America Electronic Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MG50G1BL3

Part # Distributor Description Stock Price Buy
Quest Components POWER BIPOLAR TRANSISTOR, 50A I(C), 450V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN 21
  • 1 $78.0000
  • 7 $75.0000
  • 14 $72.0000
$72.0000 / $78.0000 Buy Now
Quest Components POWER BIPOLAR TRANSISTOR, 50A I(C), 450V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN 18
  • 1 $36.6440
  • 8 $34.8118
  • 15 $32.9796
$32.9796 / $36.6440 Buy Now

Part Details for MG50G1BL3

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MG50G1BL3 Part Data Attributes

MG50G1BL3 Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
MG50G1BL3 Toshiba America Electronic Components TRANSISTOR 50 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-33C1A, 3 PIN, BIP General Purpose Power
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Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PUFM-X3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 450 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PUFM-X3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MG50G1BL3

This table gives cross-reference parts and alternative options found for MG50G1BL3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG50G1BL3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
D64EV6 Rochester Electronics LLC Check for Price 50A, 450V, NPN, Si, POWER TRANSISTOR, TO-204AE MG50G1BL3 vs D64EV6
KS524505 Powerex Power Semiconductors Check for Price Power Bipolar Transistor, 50A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon MG50G1BL3 vs KS524505
QM50HA-H Mitsubishi Electric Check for Price Power Bipolar Transistor, 50A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin MG50G1BL3 vs QM50HA-H
D64DV7 Rochester Electronics LLC Check for Price 50A, 500V, NPN, Si, POWER TRANSISTOR, TO-204AE MG50G1BL3 vs D64DV7
D64DV6 Rochester Electronics LLC Check for Price 50A, 450V, NPN, Si, POWER TRANSISTOR, TO-204AE MG50G1BL3 vs D64DV6
D64EV5 Harris Semiconductor Check for Price Power Bipolar Transistor, 50A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin MG50G1BL3 vs D64EV5
ETK81-050 Fuji Electric Co Ltd Check for Price Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, M102, 3 PIN MG50G1BL3 vs ETK81-050
D64EV7 Harris Semiconductor Check for Price Power Bipolar Transistor, 50A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin MG50G1BL3 vs D64EV7
D64DV6 Harris Semiconductor Check for Price Power Bipolar Transistor, 50A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin MG50G1BL3 vs D64DV6

MG50G1BL3 Related Parts

MG50G1BL3 Frequently Asked Questions (FAQ)

  • The recommended gate resistance for the MG50G1BL3 is between 10 ohms to 20 ohms to ensure stable switching and minimize oscillations.

  • Yes, the MG50G1BL3 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of characteristics, and the gate drive circuitry is designed to handle the parallel configuration.

  • The maximum allowed dv/dt for the MG50G1BL3 is 5 kV/μs, and it's recommended to limit dv/dt to 2 kV/μs or less to ensure reliable operation and minimize electromagnetic interference (EMI).

  • Proper thermal management is crucial for the MG50G1BL3. Ensure good heat sink contact, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature of 150°C.

  • The MG50G1BL3 is suitable for high-frequency applications up to 20 kHz, but it's essential to consider the switching losses, thermal management, and electromagnetic compatibility (EMC) when designing the system.