Part Details for MG300Q1US11 by Toshiba America Electronic Components
Overview of MG300Q1US11 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for MG300Q1US11
MG300Q1US11 CAD Models
MG300Q1US11 Part Data Attributes:
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MG300Q1US11
Toshiba America Electronic Components
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Datasheet
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MG300Q1US11
Toshiba America Electronic Components
TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 1000 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2000 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.7 V |
Alternate Parts for MG300Q1US11
This table gives cross-reference parts and alternative options found for MG300Q1US11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300Q1US11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1MBI300L-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | MG300Q1US11 vs 1MBI300L-120 |
2MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | MG300Q1US11 vs 2MBI200S-120 |
CM100DY-24A | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | MG300Q1US11 vs CM100DY-24A |
MG500Q1US2 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US11 vs MG500Q1US2 |
CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG300Q1US11 vs CM150DU-24H |
CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG300Q1US11 vs CM600HA-24H |
2MBI150F-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN | Fuji Electric Co Ltd | MG300Q1US11 vs 2MBI150F-120 |
MG100Q2YS42 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US11 vs MG100Q2YS42 |
1MBI300N-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | MG300Q1US11 vs 1MBI300N-120 |
1MBI400S-120 | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG300Q1US11 vs 1MBI400S-120 |