Part Details for MG25Q6ES50 by Toshiba America Electronic Components
Results Overview of MG25Q6ES50 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MG25Q6ES50 Information
MG25Q6ES50 by Toshiba America Electronic Components is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MG25Q6ES50
MG25Q6ES50 CAD Models
MG25Q6ES50 Part Data Attributes
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MG25Q6ES50
Toshiba America Electronic Components
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Datasheet
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MG25Q6ES50
Toshiba America Electronic Components
TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| Additional Feature | HIGH SPEED SWITCHING | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-PDIP-P24 | |
| Number of Elements | 6 | |
| Number of Terminals | 24 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | DUAL | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 200 ns |
Alternate Parts for MG25Q6ES50
This table gives cross-reference parts and alternative options found for MG25Q6ES50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG25Q6ES50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSM25GD120DN2E3224 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | MG25Q6ES50 vs BSM25GD120DN2E3224 |
| MG25Q6ES50A | Toshiba America Electronic Components | Check for Price | TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor | MG25Q6ES50 vs MG25Q6ES50A |
| CM30TF-24H | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | MG25Q6ES50 vs CM30TF-24H |
| BSM25GD120DN2 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | MG25Q6ES50 vs BSM25GD120DN2 |
| 6MBI25F-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN | MG25Q6ES50 vs 6MBI25F-120 |
| BSM25GD120D2 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel | MG25Q6ES50 vs BSM25GD120D2 |
| BSM25GD120DN2E3224 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 | MG25Q6ES50 vs BSM25GD120DN2E3224 |
| 6MBI25LB-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | MG25Q6ES50 vs 6MBI25LB-120 |
| BSM25GD120D2 | Eupec Gmbh & Co Kg | Check for Price | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, | MG25Q6ES50 vs BSM25GD120D2 |