Part Details for MG200Q1ZS11 by Toshiba America Electronic Components
Overview of MG200Q1ZS11 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for MG200Q1ZS11
MG200Q1ZS11 CAD Models
MG200Q1ZS11 Part Data Attributes
|
MG200Q1ZS11
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
MG200Q1ZS11
Toshiba America Electronic Components
TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-109B5A, 5 PIN, Insulated Gate BIP Transistor
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Pin Count | 5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH SPEED | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 1000 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1400 W | |
Power Dissipation-Max (Abs) | 1400 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 600 ns | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.7 V |