Datasheets
MG200Q1JS40 by: Toshiba America Electronic Components

TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Part Details for MG200Q1JS40 by Toshiba America Electronic Components

Overview of MG200Q1JS40 by Toshiba America Electronic Components

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Price & Stock for MG200Q1JS40

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 31
  • 1 $114.0000
  • 5 $109.6110
  • 8 $105.2220
  • 16 $100.8444
  • 25 $96.4668
$96.4668 / $114.0000 Buy Now
Quest Components 200 A, 1200 V, N-CHANNEL IGBT 24
  • 1 $123.5000
  • 9 $114.0000
  • 19 $109.2500
$109.2500 / $123.5000 Buy Now

Part Details for MG200Q1JS40

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MG200Q1JS40 Part Data Attributes

MG200Q1JS40 Toshiba America Electronic Components
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MG200Q1JS40 Toshiba America Electronic Components TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description 2-109C3A, 5 PIN
Reach Compliance Code unknown
Additional Feature HIGH SPEED SWITCHING
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-PUFM-X5
Number of Elements 1
Number of Terminals 5
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 400 ns

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