Part Details for MG15Q6ES42 by Toshiba America Electronic Components
Overview of MG15Q6ES42 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MG15Q6ES42
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Chip1Cloud | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | 2370 |
|
RFQ |
Part Details for MG15Q6ES42
MG15Q6ES42 CAD Models
MG15Q6ES42 Part Data Attributes:
|
|
MG15Q6ES42
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
MG15Q6ES42
Toshiba America Electronic Components
TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| Additional Feature | HIGH SPEED | |
| Collector Current-Max (IC) | 15 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 500 ns | |
| JESD-30 Code | R-PUFM-D17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |
Alternate Parts for MG15Q6ES42
This table gives cross-reference parts and alternative options found for MG15Q6ES42. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG15Q6ES42, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM15TF-24H | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | MG15Q6ES42 vs CM15TF-24H |
| 6MBI15F-120 | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | MG15Q6ES42 vs 6MBI15F-120 |
| 6MBI15L-120 | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, M607, 15 PIN | Fuji Electric Co Ltd | MG15Q6ES42 vs 6MBI15L-120 |
| BSM15GD120D2 | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | MG15Q6ES42 vs BSM15GD120D2 |
| BSM15GD120D2 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel | Siemens | MG15Q6ES42 vs BSM15GD120D2 |
| MG15N6ES1 | TRANSISTOR 15 A, 1000 V, N-CHANNEL IGBT, 2-72A3A, 17 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG15Q6ES42 vs MG15N6ES1 |
| CM15TF-24H | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG15Q6ES42 vs CM15TF-24H |
| BSM15GD120DN2 | Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel | Siemens | MG15Q6ES42 vs BSM15GD120DN2 |