Part Details for MG100Q1JS40 by Toshiba America Electronic Components
Overview of MG100Q1JS40 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MG100Q1JS40
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 5 |
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$78.0000 | Buy Now |
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Quest Components | 100 A, 1200 V, N-CHANNEL IGBT | 4 |
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$84.5000 | Buy Now |
Part Details for MG100Q1JS40
MG100Q1JS40 CAD Models
MG100Q1JS40 Part Data Attributes:
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MG100Q1JS40
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
MG100Q1JS40
Toshiba America Electronic Components
TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A4A, 5 PIN, Insulated Gate BIP Transistor
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 500 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 670 W | |
| Power Dissipation-Max (Abs) | 670 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 600 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |