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Overview of MG100J6ES50 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
CAD Models for MG100J6ES50 by Toshiba America Electronic Components
Part Data Attributes for MG100J6ES50 by Toshiba America Electronic Components
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
TOSHIBA CORP
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|
Package Description
|
FLANGE MOUNT, R-XUFM-X19
|
|
Pin Count
|
19
|
|
Reach Compliance Code
|
unknown
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|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Additional Feature
|
HIGH SPEED
|
|
Case Connection
|
ISOLATED
|
|
Collector Current-Max (IC)
|
100 A
|
|
Collector-Emitter Voltage-Max
|
600 V
|
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Configuration
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
|
Fall Time-Max (tf)
|
300 ns
|
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Gate-Emitter Thr Voltage-Max
|
8 V
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-XUFM-X19
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|
Number of Elements
|
6
|
|
Number of Terminals
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19
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
450 W
|
|
Power Dissipation-Max (Abs)
|
450 W
|
|
Qualification Status
|
Not Qualified
|
|
Rise Time-Max (tr)
|
240 ns
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
UNSPECIFIED
|
|
Terminal Position
|
UPPER
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
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Transistor Application
|
MOTOR CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
400 ns
|
|
Turn-off Time-Nom (toff)
|
200 ns
|
|
Turn-on Time-Max (ton)
|
160 ns
|
|
Turn-on Time-Nom (ton)
|
80 ns
|
|
VCEsat-Max
|
2.7 V
|
Alternate Parts for MG100J6ES50
This table gives cross-reference parts and alternative options found for MG100J6ES50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG100J6ES50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM100TF-12H | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG100J6ES50 vs CM100TF-12H |
| BSM100GD60DLCBOSA1 | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN | Infineon Technologies AG | MG100J6ES50 vs BSM100GD60DLCBOSA1 |
| MG100J6ES1 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94A2A, 19 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100J6ES50 vs MG100J6ES1 |