Datasheets
MG100J2YS50 by: Toshiba America Electronic Components

TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor

Part Details for MG100J2YS50 by Toshiba America Electronic Components

Overview of MG100J2YS50 by Toshiba America Electronic Components

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Part Details for MG100J2YS50

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MG100J2YS50 Part Data Attributes:

MG100J2YS50 Toshiba America Electronic Components
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MG100J2YS50 Toshiba America Electronic Components TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 8 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 450 W
Power Dissipation-Max (Abs) 450 W
Qualification Status Not Qualified
Rise Time-Max (tr) 240 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 500 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 2.7 V

Alternate Parts for MG100J2YS50

This table gives cross-reference parts and alternative options found for MG100J2YS50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG100J2YS50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM300HA-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric MG100J2YS50 vs CM300HA-12H
MG150J2YS1 TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components MG100J2YS50 vs MG150J2YS1
CM100DY-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric MG100J2YS50 vs CM100DY-12H
CM400DY-12H Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors MG100J2YS50 vs CM400DY-12H
APTGT300A60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc MG100J2YS50 vs APTGT300A60G
MG300J2YS11 TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components MG100J2YS50 vs MG300J2YS11
APTGT300A60TG Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc MG100J2YS50 vs APTGT300A60TG
FMG2G300US60E Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-HA, 7 PIN Fairchild Semiconductor Corporation MG100J2YS50 vs FMG2G300US60E
CM400HA-12H Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel Mitsubishi Electric MG100J2YS50 vs CM400HA-12H
CM300DY-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric MG100J2YS50 vs CM300DY-12H

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