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Transistors / RF Power Bipolar Transistors / MDS550L
Datasheets
MDS550L by:

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST-1, 2 PIN

Part Details for MDS550L by Advanced Power Technology

Overview of MDS550L by Advanced Power Technology

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Part Details for MDS550L

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MDS550L Part Data Attributes

Parametric Data
MDS550L Advanced Power Technology
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MDS550L Advanced Power Technology RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST-1, 2 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 100 A
Configuration COMMON BASE, 2 ELEMENTS
DC Current Gain-Min (hFE) 20
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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