Datasheets
MCM63R818FC3 by:

Late-Write SRAM

Part Details for MCM63R818FC3 by NXP Semiconductors

Overview of MCM63R818FC3 by NXP Semiconductors

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Part Details for MCM63R818FC3

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MCM63R818FC3 Part Data Attributes

MCM63R818FC3 NXP Semiconductors
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MCM63R818FC3 NXP Semiconductors Late-Write SRAM
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description BGA,
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 1.5 ns
JESD-30 Code R-PBGA-B119
Length 22 mm
Memory Density 4718592 bit
Memory IC Type LATE-WRITE SRAM
Memory Width 18
Number of Functions 1
Number of Terminals 119
Number of Words 262144 words
Number of Words Code 256000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX18
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Seated Height-Max 2.77 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1.27 mm
Terminal Position BOTTOM
Width 14 mm

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