-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for MCAC60N15YA-TP by Micro Commercial Components
Overview of MCAC60N15YA-TP by Micro Commercial Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
Price & Stock for MCAC60N15YA-TP
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
353-MCAC60N15YA-TP-ND
|
DigiKey | MOSFET N-CH 150 60A DFN5060 Min Qty: 5000 Lead time: 18 Weeks Container: Bulk | Temporarily Out of Stock |
|
$0.7837 | Buy Now |
|
DISTI #
833-MCAC60N15YA-TP
|
Mouser Electronics | MOSFETs N-CHANNEL MOSFET RoHS: Compliant | 0 |
|
$0.7830 | Order Now |
|
|
Future Electronics | MCAC60 Series 150 V 60 A 19mOhm Surface Mount N-Channel MOSFETs - DFN5060 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.7700 | Buy Now |
Part Details for MCAC60N15YA-TP
MCAC60N15YA-TP CAD Models
MCAC60N15YA-TP Part Data Attributes
|
|
MCAC60N15YA-TP
Micro Commercial Components
Buy Now
Datasheet
|
Compare Parts:
MCAC60N15YA-TP
Micro Commercial Components
Power Field-Effect Transistor, 60A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060, 8 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICRO COMMERCIAL COMPONENTS CORP | |
| Package Description | DFN5060, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | MCC | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | SILICON |