Datasheets
MCAC100N03Y-TP by: Micro Commercial Components

Power Field-Effect Transistor, 100A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060-8

Part Details for MCAC100N03Y-TP by Micro Commercial Components

Results Overview of MCAC100N03Y-TP by Micro Commercial Components

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MCAC100N03Y-TP Information

MCAC100N03Y-TP by Micro Commercial Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MCAC100N03Y-TP

Part # Distributor Description Stock Price Buy
DISTI # 353-MCAC100N03Y-TPCT-ND
DigiKey MOSFET N-CH 30 100A DFN5060 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.6500
  • 10 $1.0480
  • 100 $0.7010
  • 500 $0.5520
  • 1,000 $0.5041
  • 2,000 $0.4638
  • 5,000 $0.4202
  • 10,000 $0.4039
$0.4039 / $1.6500 Buy Now
DISTI # 833-MCAC100N03Y-TP
Mouser Electronics MOSFETs N-CHANNEL MOSFET, DFN5060 RoHS: Compliant 0
  • 5,000 $0.4200
  • 10,000 $0.4030
$0.4030 / $0.4200 Order Now

Part Details for MCAC100N03Y-TP

MCAC100N03Y-TP CAD Models

MCAC100N03Y-TP Part Data Attributes

MCAC100N03Y-TP Micro Commercial Components
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MCAC100N03Y-TP Micro Commercial Components Power Field-Effect Transistor, 100A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060-8
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICRO COMMERCIAL COMPONENTS CORP
Package Description DFN5060-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer MCC
Avalanche Energy Rating (Eas) 312 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 108 pF
JESD-30 Code R-PDSO-F8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount YES
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON