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Power Field-Effect Transistor, 100A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060-8
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MCAC100N03Y-TP by Micro Commercial Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
353-MCAC100N03Y-TPCT-ND
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DigiKey | MOSFET N-CH 30 100A DFN5060 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.4039 / $1.6500 | Buy Now |
DISTI #
833-MCAC100N03Y-TP
|
Mouser Electronics | MOSFETs N-CHANNEL MOSFET, DFN5060 RoHS: Compliant | 0 |
|
$0.4030 / $0.4200 | Order Now |
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MCAC100N03Y-TP
Micro Commercial Components
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Datasheet
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MCAC100N03Y-TP
Micro Commercial Components
Power Field-Effect Transistor, 100A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN5060-8
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICRO COMMERCIAL COMPONENTS CORP | |
Package Description | DFN5060-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | MCC | |
Avalanche Energy Rating (Eas) | 312 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 108 pF | |
JESD-30 Code | R-PDSO-F8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Element Material | SILICON |