Datasheets
MC-4R512FKE6D-653 by: Elpida Memory Inc

Rambus DRAM Module, 256MX16, 53ns, MOS, SOCKET TYPE, RIMM-184

Part Details for MC-4R512FKE6D-653 by Elpida Memory Inc

Overview of MC-4R512FKE6D-653 by Elpida Memory Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for MC-4R512FKE6D-653

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MC-4R512FKE6D-653 Part Data Attributes:

MC-4R512FKE6D-653 Elpida Memory Inc
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MC-4R512FKE6D-653 Elpida Memory Inc Rambus DRAM Module, 256MX16, 53ns, MOS, SOCKET TYPE, RIMM-184
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code DMA
Package Description DIMM, DIMM184,40
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode BLOCK ORIENTED PROTOCOL
Access Time-Max 53 ns
Additional Feature SELF CONTAINED REFRESH
Clock Frequency-Max (fCLK) 600 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 4294967296 bit
Memory IC Type RAMBUS DRAM MODULE
Memory Width 16
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Organization 256MX16
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184,40
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 2.63 V
Supply Voltage-Min (Vsup) 2.37 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology MOS
Terminal Form NO LEAD
Terminal Pitch 1 mm
Terminal Position DUAL

Alternate Parts for MC-4R512FKE6D-653

This table gives cross-reference parts and alternative options found for MC-4R512FKE6D-653. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-4R512FKE6D-653, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYR1825640G-653 Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184 Infineon Technologies AG MC-4R512FKE6D-653 vs HYR1825640G-653
MC-4R512FKE8D-653 Rambus DRAM Module, 256MX18, 2.11ns, MOS, SOCKET TYPE, RIMM-184 Elpida Memory Inc MC-4R512FKE6D-653 vs MC-4R512FKE8D-653
HYMR225618H-653 Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184 SK Hynix Inc MC-4R512FKE6D-653 vs HYMR225618H-653
Part Number Description Manufacturer Compare
THMR2E16-6 IC 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM Toshiba America Electronic Components MC-4R512FKE6D-653 vs THMR2E16-6
EBR51EC8ABFD-AE Rambus DRAM Module, 256MX18, 32ns, CMOS, RIMM-184 Elpida Memory Inc MC-4R512FKE6D-653 vs EBR51EC8ABFD-AE
HYMR225618H-653 Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184 SK Hynix Inc MC-4R512FKE6D-653 vs HYMR225618H-653
MC-4R512FKE8D-845 Rambus DRAM Module, 256MX18, 2.11ns, MOS, SOCKET TYPE, RIMM-184 Elpida Memory Inc MC-4R512FKE6D-653 vs MC-4R512FKE8D-845
EBR51EC8ABFD-8C Rambus DRAM Module, 256MX18, 40ns, CMOS, RIMM-184 Elpida Memory Inc MC-4R512FKE6D-653 vs EBR51EC8ABFD-8C
MR18R162GDF0-CM9 Rambus DRAM Module, 256MX18, 35ns, CMOS, RIMM-184 Samsung Semiconductor MC-4R512FKE6D-653 vs MR18R162GDF0-CM9
HYR1825640G-840 Rambus DRAM Module, 256MX18, 40ns, CMOS, RIMM-184 Infineon Technologies AG MC-4R512FKE6D-653 vs HYR1825640G-840
MR18R162GAF0-CK8 Rambus DRAM Module, 256MX18, 45ns, CMOS, RIMM-184 Samsung Semiconductor MC-4R512FKE6D-653 vs MR18R162GAF0-CK8
HYR1825640G-653 Rambus DRAM Module, 256MX18, 53ns, CMOS, RIMM-184 Infineon Technologies AG MC-4R512FKE6D-653 vs HYR1825640G-653
HYMR225618H-840 Rambus DRAM Module, 256MX18, 40ns, CMOS, RIMM-184 SK Hynix Inc MC-4R512FKE6D-653 vs HYMR225618H-840

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