Datasheets
MC-458CB646EFB-A10 by:

Synchronous DRAM Module, 8MX64, 6ns, MOS, SOCKET TYPE, DIMM-168

Part Details for MC-458CB646EFB-A10 by Elpida Memory Inc

Overview of MC-458CB646EFB-A10 by Elpida Memory Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for MC-458CB646EFB-A10

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MC-458CB646EFB-A10 Part Data Attributes:

MC-458CB646EFB-A10 Elpida Memory Inc
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MC-458CB646EFB-A10 Elpida Memory Inc Synchronous DRAM Module, 8MX64, 6ns, MOS, SOCKET TYPE, DIMM-168
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code DIMM
Package Description DIMM, DIMM168
Pin Count 168
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N168
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 168
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM168
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.004 A
Supply Current-Max 0.92 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for MC-458CB646EFB-A10

This table gives cross-reference parts and alternative options found for MC-458CB646EFB-A10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-458CB646EFB-A10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MC-458CB646XFB-A10 Synchronous DRAM Module, 8MX64, 6ns, MOS, SOCKET TYPE, DIMM-168 Elpida Memory Inc MC-458CB646EFB-A10 vs MC-458CB646XFB-A10
Part Number Description Manufacturer Compare
M366S0924BTS-C80 Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 Samsung Semiconductor MC-458CB646EFB-A10 vs M366S0924BTS-C80
EDI4G649EV6D EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 Electronic Designs Inc MC-458CB646EFB-A10 vs EDI4G649EV6D
THMY648091EG-10 IC 8M X 64 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168, DIMM-168, Dynamic RAM Toshiba America Electronic Components MC-458CB646EFB-A10 vs THMY648091EG-10
WED3DG649V75D2 Synchronous DRAM Module, 8MX64, CMOS, DIMM-168 Microsemi Corporation MC-458CB646EFB-A10 vs WED3DG649V75D2
M364C0883CT0-C50 Fast Page DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 Samsung Semiconductor MC-458CB646EFB-A10 vs M364C0883CT0-C50
WED3DG637V7D2 Synchronous DRAM Module, 8MX64, CMOS, DIMM-168 Microsemi Corporation MC-458CB646EFB-A10 vs WED3DG637V7D2
MT8LDT864AG-5 Fast Page DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 Micron Technology Inc MC-458CB646EFB-A10 vs MT8LDT864AG-5
V43648S04VTG-12 Synchronous DRAM Module, 8MX64, 7ns, CMOS Mosel Vitelic Corporation MC-458CB646EFB-A10 vs V43648S04VTG-12
HYM7V65831ATFG1-10P Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 SK Hynix Inc MC-458CB646EFB-A10 vs HYM7V65831ATFG1-10P
M364E0803CT0-C50 EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 Samsung Semiconductor MC-458CB646EFB-A10 vs M364E0803CT0-C50

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