There are no models available for this part yet.
Overview of MBN400GS12A by Hitachi Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MBN400GS12A by Hitachi Ltd
Part Data Attributes for MBN400GS12A by Hitachi Ltd
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|---|---|
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Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
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HITACHI LTD
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Part Package Code
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MODULE
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Package Description
|
,
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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HIGH SPEED, ULTRA SOFT FAST RECOVERY
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Case Connection
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ISOLATED
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Collector Current-Max (IC)
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400 A
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Collector-Emitter Voltage-Max
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1200 V
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Configuration
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SINGLE WITH BUILT-IN DIODE
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Number of Elements
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1
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Transistor Application
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POWER CONTROL
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Transistor Element Material
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SILICON
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Turn-on Time-Nom (ton)
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400 ns
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Alternate Parts for MBN400GS12A
This table gives cross-reference parts and alternative options found for MBN400GS12A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MBN400GS12A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGRDN300M12 | Insulated Gate Bipolar Transistor, 560A I(C), 1200V V(BR)CES, N-Channel, POWER, DOUBLE INT-A-PAK-4 | International Rectifier | MBN400GS12A vs IRGRDN300M12 |
| IRGDDN300M12 | Insulated Gate Bipolar Transistor, 560A I(C), 1200V V(BR)CES, N-Channel, POWER, DOUBLE INT-A-PAK-4 | International Rectifier | MBN400GS12A vs IRGDDN300M12 |
| MBN300GS12A | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE | Hitachi Ltd | MBN400GS12A vs MBN300GS12A |
| IRGRDN400M12 | Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, POWER, DOUBLE INT-A-PAK-4 | International Rectifier | MBN400GS12A vs IRGRDN400M12 |