MBN1200GS12AW
Description: Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES

Overview of MBN1200GS12AW by Hitachi Ltd

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

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Part Data Attributes for MBN1200GS12AW by Hitachi Ltd

MBN1200GS12AW
Hitachi Ltd
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
HITACHI LTD
Package Description
FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
1200 A
Collector-Emitter Voltage-Max
1200 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PUFM-X4
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation-Max (Abs)
5600 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
VCEsat-Max
3.6 V
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  1. MBN1200GS12AW
    Hitachi Ltd
    Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
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