MBM300GR6
Description: Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,

Overview of MBM300GR6 by Hitachi Ltd

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  • Number of FFF Equivalents: ( 0 replacements )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for MBM300GR6 by Hitachi Ltd

MBM300GR6
Hitachi Ltd
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
HITACHI LTD
Package Description
FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY, LOW NOISE
Case Connection
ISOLATED
Collector Current-Max (IC)
300 A
Collector-Emitter Voltage-Max
600 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Number of Terminals
7
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
930 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
750 ns
Turn-on Time-Nom (ton)
350 ns
VCEsat-Max
2.6 V
Want to compare parts?
  1. MBM300GR6
    Hitachi Ltd
    Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
    VS

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