Part Details for MB81F641642C-103FN by FUJITSU Limited
Overview of MB81F641642C-103FN by FUJITSU Limited
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MB81F641642C-103FN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 1200 |
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$4.9162 / $8.5500 | Buy Now |
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Quest Components | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 | 960 |
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$5.9850 / $11.4000 | Buy Now |
Part Details for MB81F641642C-103FN
MB81F641642C-103FN CAD Models
MB81F641642C-103FN Part Data Attributes
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MB81F641642C-103FN
FUJITSU Limited
Buy Now
Datasheet
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Compare Parts:
MB81F641642C-103FN
FUJITSU Limited
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F641642C-103FN
This table gives cross-reference parts and alternative options found for MB81F641642C-103FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F641642C-103FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V54C365164VET8PC | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | MB81F641642C-103FN vs V54C365164VET8PC |
| MB81F641642B-10FN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | MB81F641642C-103FN vs MB81F641642B-10FN |
| GM72V661641CLT-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | SK Hynix Inc | MB81F641642C-103FN vs GM72V661641CLT-8 |
| HM5264165FLTT-B60 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | MB81F641642C-103FN vs HM5264165FLTT-B60 |
| MB81F641642D-10FN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | MB81F641642C-103FN vs MB81F641642D-10FN |
| K4S641632H-TC700 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | MB81F641642C-103FN vs K4S641632H-TC700 |
| HYB39S64160ETL-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | MB81F641642C-103FN vs HYB39S64160ETL-8 |
| K4S641632E-TL700 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-103FN vs K4S641632E-TL700 |
| VG36641641BTS-7P | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | MB81F641642C-103FN vs VG36641641BTS-7P |
| K4S641632C-TL800 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-103FN vs K4S641632C-TL800 |