Part Details for MB81F641642C-102FN by FUJITSU Limited
Overview of MB81F641642C-102FN by FUJITSU Limited
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MB81F641642C-102FN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 | 6 |
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Part Details for MB81F641642C-102FN
MB81F641642C-102FN CAD Models
MB81F641642C-102FN Part Data Attributes
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MB81F641642C-102FN
FUJITSU Limited
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Datasheet
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MB81F641642C-102FN
FUJITSU Limited
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F641642C-102FN
This table gives cross-reference parts and alternative options found for MB81F641642C-102FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F641642C-102FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48LC4M16A2TG-8EL:GIT | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | MB81F641642C-102FN vs MT48LC4M16A2TG-8EL:GIT |
| HYB39S64162AT-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Siemens | MB81F641642C-102FN vs HYB39S64162AT-8 |
| MB81F641642D-102FN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | FUJITSU Limited | MB81F641642C-102FN vs MB81F641642D-102FN |
| IBMN364164CT3C-360 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | MB81F641642C-102FN vs IBMN364164CT3C-360 |
| KM416S4030BT-FH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-102FN vs KM416S4030BT-FH |
| KM416S4030CT-GH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-102FN vs KM416S4030CT-GH |
| M2V64S40DTP-7 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | MB81F641642C-102FN vs M2V64S40DTP-7 |
| HM5264165DLTT-A60 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | MB81F641642C-102FN vs HM5264165DLTT-A60 |
| HY57V651620BLTC-10SI | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | MB81F641642C-102FN vs HY57V651620BLTC-10SI |
| MB81F641642C-102EFN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | MB81F641642C-102FN vs MB81F641642C-102EFN |