There are no models available for this part yet.
Overview of MB81F641642C-102FN by FUJITSU Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for MB81F641642C-102FN by FUJITSU Limited
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 | 6 |
|
Buy Now |
CAD Models for MB81F641642C-102FN by FUJITSU Limited
Part Data Attributes for MB81F641642C-102FN by FUJITSU Limited
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
FUJITSU LTD
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2, TSOP54,.46,32
|
|
Pin Count
|
54
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
6 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
100 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
2,4,8
|
|
JESD-30 Code
|
R-PDSO-G54
|
|
JESD-609 Code
|
e0
|
|
Length
|
22.22 mm
|
|
Memory Density
|
67108864 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
54
|
|
Number of Words
|
4194304 words
|
|
Number of Words Code
|
4000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
4MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP54,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
4096
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
1,2,4,8,FP
|
|
Standby Current-Max
|
0.001 A
|
|
Supply Current-Max
|
0.24 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
10.16 mm
|
Alternate Parts for MB81F641642C-102FN
This table gives cross-reference parts and alternative options found for MB81F641642C-102FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F641642C-102FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM416S4030DT-G/FH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-102FN vs KM416S4030DT-G/FH |
| V54C365164VEE8PC | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | MB81F641642C-102FN vs V54C365164VEE8PC |
| K4S641632D-TC800 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F641642C-102FN vs K4S641632D-TC800 |
| MD56V62160E-10TA | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | LAPIS Semiconductor Co Ltd | MB81F641642C-102FN vs MD56V62160E-10TA |
| MT48LC4M16A2P-8EL:GIT | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | MB81F641642C-102FN vs MT48LC4M16A2P-8EL:GIT |
| HY57V651620ATC-10P | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | MB81F641642C-102FN vs HY57V651620ATC-10P |
| MT48LC4M16A2P-8EL:G | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | MB81F641642C-102FN vs MT48LC4M16A2P-8EL:G |
| UPD4564163G5-A80-9JF | Synchronous DRAM, 4MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | MB81F641642C-102FN vs UPD4564163G5-A80-9JF |
| V54C365164VCT8PC | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | MB81F641642C-102FN vs V54C365164VCT8PC |
| VG36641641BTS-7P | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | MB81F641642C-102FN vs VG36641641BTS-7P |