Datasheets
MB81F12442-102FN by:
FUJITSU Limited
FUJITSU Limited
FUJITSU Semiconductor Limited
Not Found

Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Part Details for MB81F12442-102FN by FUJITSU Limited

Results Overview of MB81F12442-102FN by FUJITSU Limited

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

MB81F12442-102FN Information

MB81F12442-102FN by FUJITSU Limited is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for MB81F12442-102FN

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MB81F12442-102FN Part Data Attributes

MB81F12442-102FN FUJITSU Limited
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MB81F12442-102FN FUJITSU Limited Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description TSOP2, TSOP54,.46,32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.24 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MB81F12442-102FN

This table gives cross-reference parts and alternative options found for MB81F12442-102FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F12442-102FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4S281632C-TC750 Samsung Semiconductor Check for Price Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 MB81F12442-102FN vs K4S281632C-TC750
V54C3128164VCI7IPC ProMOS Technologies Inc Check for Price Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 MB81F12442-102FN vs V54C3128164VCI7IPC
V54C3128404VCI7E ProMOS Technologies Inc Check for Price Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 MB81F12442-102FN vs V54C3128404VCI7E
TC59SM716ASL-80 Toshiba America Electronic Components Check for Price IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.40 MM PITCH. PLASTIC, TSOP2-54, Dynamic RAM MB81F12442-102FN vs TC59SM716ASL-80
HY57V281620BT-S SK Hynix Inc Check for Price Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 MB81F12442-102FN vs HY57V281620BT-S
TC59SM704AFTL-80 Toshiba America Electronic Components Check for Price IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM MB81F12442-102FN vs TC59SM704AFTL-80
W9812G6DH-7 Winbond Electronics Corp Check for Price Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 MB81F12442-102FN vs W9812G6DH-7
V54C3128404VCLI10E ProMOS Technologies Inc Check for Price Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 MB81F12442-102FN vs V54C3128404VCLI10E
HY57V281620HCT-P SK Hynix Inc Check for Price Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 MB81F12442-102FN vs HY57V281620HCT-P
GM72V28441ALT LG Semicon Co Ltd Check for Price Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP-54 MB81F12442-102FN vs GM72V28441ALT