Part Details for MB81F12442-102FN by FUJITSU Limited
Results Overview of MB81F12442-102FN by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MB81F12442-102FN Information
MB81F12442-102FN by FUJITSU Limited is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MB81F12442-102FN
MB81F12442-102FN CAD Models
MB81F12442-102FN Part Data Attributes
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MB81F12442-102FN
FUJITSU Limited
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Datasheet
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MB81F12442-102FN
FUJITSU Limited
Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJITSU LTD | |
Package Description | TSOP2, TSOP54,.46,32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.24 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for MB81F12442-102FN
This table gives cross-reference parts and alternative options found for MB81F12442-102FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F12442-102FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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K4S281632C-TC750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MB81F12442-102FN vs K4S281632C-TC750 |
V54C3128164VCI7IPC | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | MB81F12442-102FN vs V54C3128164VCI7IPC |
V54C3128404VCI7E | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | MB81F12442-102FN vs V54C3128404VCI7E |
TC59SM716ASL-80 | Toshiba America Electronic Components | Check for Price | IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.40 MM PITCH. PLASTIC, TSOP2-54, Dynamic RAM | MB81F12442-102FN vs TC59SM716ASL-80 |
HY57V281620BT-S | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 | MB81F12442-102FN vs HY57V281620BT-S |
TC59SM704AFTL-80 | Toshiba America Electronic Components | Check for Price | IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | MB81F12442-102FN vs TC59SM704AFTL-80 |
W9812G6DH-7 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | MB81F12442-102FN vs W9812G6DH-7 |
V54C3128404VCLI10E | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | MB81F12442-102FN vs V54C3128404VCLI10E |
HY57V281620HCT-P | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | MB81F12442-102FN vs HY57V281620HCT-P |
GM72V28441ALT | LG Semicon Co Ltd | Check for Price | Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP-54 | MB81F12442-102FN vs GM72V28441ALT |