Datasheets
MB81117422E-100FN by:

Synchronous DRAM, 4MX4, 8.5ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

Part Details for MB81117422E-100FN by FUJITSU Limited

Overview of MB81117422E-100FN by FUJITSU Limited

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Applications Computing and Data Storage

Part Details for MB81117422E-100FN

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MB81117422E-100FN Part Data Attributes

MB81117422E-100FN FUJITSU Limited
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MB81117422E-100FN FUJITSU Limited Synchronous DRAM, 4MX4, 8.5ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description TSOP2, TSOP44,.46,32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 8.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G44
JESD-609 Code e0
Length 18.41 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 44
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.135 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MB81117422E-100FN

This table gives cross-reference parts and alternative options found for MB81117422E-100FN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81117422E-100FN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48LC4M4R1TG-10 Synchronous DRAM, 4MX4, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 Micron Technology Inc MB81117422E-100FN vs MT48LC4M4R1TG-10
HY57V164010ALTC-10 Synchronous DRAM, 4MX4, 8ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc MB81117422E-100FN vs HY57V164010ALTC-10
HY57V164010CLTC-8 Synchronous DRAM, 4MX4, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc MB81117422E-100FN vs HY57V164010CLTC-8
HY57V164010BLTC-12 Synchronous DRAM, 4MX4, 8.5ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc MB81117422E-100FN vs HY57V164010BLTC-12
TMS626402-15DGE 4MX4 SYNCHRONOUS DRAM, PDSO44, 0.400 INCH, PLASTIC, TSOPII-44 Texas Instruments MB81117422E-100FN vs TMS626402-15DGE
MC16S044T3BTN10R Synchronous DRAM, 4MX4, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, TSOP-44 Motorola Semiconductor Products MB81117422E-100FN vs MC16S044T3BTN10R
KM44S4020CT-FL Synchronous DRAM, 4MX4, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Samsung Semiconductor MB81117422E-100FN vs KM44S4020CT-FL
IBM0316409CT3-13 Synchronous DRAM, 4MX4, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 IBM MB81117422E-100FN vs IBM0316409CT3-13
MB81F16422B-103FN Synchronous DRAM, 4MX4, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Limited MB81117422E-100FN vs MB81F16422B-103FN
MT48LC4M4R1RG-13TR Synchronous DRAM, 4MX4, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP-44 Micron Technology Inc MB81117422E-100FN vs MT48LC4M4R1RG-13TR

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