Datasheets
MAX2602ESA+T by:

3.6V, 1W RF Power Transistors for 900MHz Applications, 8-SOIC_N-150_MIL, 8 Pins, -40 to 85C

Part Details for MAX2602ESA+T by Analog Devices Inc

Overview of MAX2602ESA+T by Analog Devices Inc

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Applications Education and Research Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Aerospace and Defense Transportation and Logistics Healthcare Telecommunications Entertainment and Gaming Automotive

Price & Stock for MAX2602ESA+T

Part # Distributor Description Stock Price Buy
DISTI # 700-MAX2602ESAT
Mouser Electronics RF Bipolar Transistors 3.6V, 1W RF Power Transistors for 900MHz Applications RoHS: Compliant 0
  • 1 $7.1300
  • 10 $6.1100
  • 25 $5.5400
  • 100 $5.0900
  • 250 $4.7900
  • 500 $4.4900
  • 1,000 $4.0400
  • 2,500 $3.7900
$3.7900 / $7.1300 Order Now
Analog Devices Inc 3.6V, 1W RF Power Transistors Min Qty: 2500 Package Multiple: 1 0
  • 1,000 $3.5400
  • 2,500 $3.8996
$3.5400 / $3.8996 Buy Now
DISTI # MAX2602ESA+T
Richardson RFPD POWER BJT TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $3.7800
$3.7800 Buy Now
DISTI # 3927123
Farnell RF AMPLIFIER, 11.6DB, 1GHZ, 3.6V, NSOIC RoHS: Compliant Min Qty: 2500 Lead time: 11 Weeks, 1 Days Container: Reel 0
  • 2,500 $3.9325
$3.9325 Buy Now

Part Details for MAX2602ESA+T

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MAX2602ESA+T Part Data Attributes:

MAX2602ESA+T Analog Devices Inc
Buy Now Datasheet
Compare Parts:
MAX2602ESA+T Analog Devices Inc 3.6V, 1W RF Power Transistors for 900MHz Applications, 8-SOIC_N-150_MIL, 8 Pins, -40 to 85C
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code 8-SOIC_N-150_MIL
Pin Count 8
Manufacturer Package Code 8-SOIC_N-150_MIL
Date Of Intro 1997-08-07
Samacsys Manufacturer Analog Devices
Collector Current-Max (IC) 1.2 A
Collector-Emitter Voltage-Max 15 V
Configuration SINGLE WITH BUILT-IN DIODE
DC Current Gain-Min (hFE) 100
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MAX2602ESA+T

This table gives cross-reference parts and alternative options found for MAX2602ESA+T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MAX2602ESA+T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MAX2602ESA-T RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8 Maxim Integrated Products MAX2602ESA+T vs MAX2602ESA-T
Part Number Description Manufacturer Compare
MAX2602ESA-T RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PSOP-8 Maxim Integrated Products MAX2602ESA+T vs MAX2602ESA-T

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