Datasheets
M5M4V64S40ATP-10L by: Mitsubishi Electric

Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54

Part Details for M5M4V64S40ATP-10L by Mitsubishi Electric

Overview of M5M4V64S40ATP-10L by Mitsubishi Electric

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for M5M4V64S40ATP-10L

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M5M4V64S40ATP-10L Part Data Attributes

M5M4V64S40ATP-10L Mitsubishi Electric
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M5M4V64S40ATP-10L Mitsubishi Electric Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description TSOP, TSOP54,.46,32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 8 ns
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.125 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL

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