Datasheets
M53230810DW0-C50 by: Samsung Semiconductor

EDO DRAM Module, 8MX32, 50ns, CMOS, SIMM-72

Part Details for M53230810DW0-C50 by Samsung Semiconductor

Overview of M53230810DW0-C50 by Samsung Semiconductor

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Part Details for M53230810DW0-C50

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M53230810DW0-C50 Part Data Attributes

M53230810DW0-C50 Samsung Semiconductor
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M53230810DW0-C50 Samsung Semiconductor EDO DRAM Module, 8MX32, 50ns, CMOS, SIMM-72
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SIMM
Package Description SIMM, SSIM72
Pin Count 72
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Category CO2 Kg 12
Compliance Temperature Grade Commercial: +0C to +70C
Candidate List Date 2013-06-20
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-XSMA-N72
Memory Density 268435456 bit
Memory IC Type EDO DRAM MODULE
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 72
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX32
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code SIMM
Package Equivalence Code SSIM72
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 2048
Standby Current-Max 0.016 A
Supply Current-Max 0.896 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position SINGLE

Alternate Parts for M53230810DW0-C50

This table gives cross-reference parts and alternative options found for M53230810DW0-C50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M53230810DW0-C50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M53230810DB0-C50 EDO DRAM Module, 8MX32, 50ns, CMOS, SIMM-72 Samsung Semiconductor M53230810DW0-C50 vs M53230810DB0-C50
Part Number Description Manufacturer Compare
GMM7328100CSG-7 Fast Page DRAM Module, 8MX32, 70ns, CMOS, SIMM-72 LG Semicon Co Ltd M53230810DW0-C50 vs GMM7328100CSG-7
M53210810DW0-C60 Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 Samsung Semiconductor M53230810DW0-C50 vs M53210810DW0-C60
KMM5328100AV-6 Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 Samsung Semiconductor M53230810DW0-C50 vs KMM5328100AV-6
HB56U832SB-6BN EDO DRAM Module, 8MX32, 60ns, MOS, SIMM-72 Hitachi Ltd M53230810DW0-C50 vs HB56U832SB-6BN
M53210800DB0-C60 Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 Samsung Semiconductor M53230810DW0-C50 vs M53210800DB0-C60
HYM532814BSLMG-60 EDO DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 SK Hynix Inc M53230810DW0-C50 vs HYM532814BSLMG-60
STI328000-70TB Fast Page DRAM Module, 8MX32, 70ns, CMOS, SIMM-72 Simple Tech Inc M53230810DW0-C50 vs STI328000-70TB
HB56A832SBS-6A Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 Hitachi Ltd M53230810DW0-C50 vs HB56A832SBS-6A
HB56A832BS-6B Fast Page DRAM Module, 8MX32, 60ns, MOS, SIMM-72 Hitachi Ltd M53230810DW0-C50 vs HB56A832BS-6B
MT16D832G-7X EDO DRAM Module, 8MX32, 70ns, CMOS, SIMM-72 Micron Technology Inc M53230810DW0-C50 vs MT16D832G-7X

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