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Memory / DRAMs / M312L6420ETS-CA2
Datasheets
M312L6420ETS-CA2 by: Samsung Semiconductor

DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184

Part Details for M312L6420ETS-CA2 by Samsung Semiconductor

Results Overview of M312L6420ETS-CA2 by Samsung Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Computing and Data Storage

M312L6420ETS-CA2 Information

M312L6420ETS-CA2 by Samsung Semiconductor is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for M312L6420ETS-CA2

Part # Distributor Description Stock Price Buy
Bristol Electronics   150
RFQ

Part Details for M312L6420ETS-CA2

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M312L6420ETS-CA2 Part Data Attributes

Parametric Data
M312L6420ETS-CA2 Samsung Semiconductor
Buy Now Datasheet
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M312L6420ETS-CA2 Samsung Semiconductor DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM-184
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 4831838208 bit
Memory IC Type DDR DRAM MODULE
Memory Width 72
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX72
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.38 A
Supply Current-Max 4.95 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for M312L6420ETS-CA2

This table gives cross-reference parts and alternative options found for M312L6420ETS-CA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L6420ETS-CA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
M383L6420ETS-CA2 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M383L6420ETS-CA2
M383L6420ETS-CAA Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M383L6420ETS-CAA
M312L6420EUS-CB0 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 M312L6420ETS-CA2 vs M312L6420EUS-CB0
M312L6420EG0-CB0 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M312L6420EG0-CB0
M383L6420ETS-CB0 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M383L6420ETS-CB0
M312L6420EG0-CA2 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M312L6420EG0-CA2
M312L6420HUS-CB0 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 M312L6420ETS-CA2 vs M312L6420HUS-CB0
Part Number Manufacturer Composite Price Description Compare
V827464N24SCFX-D3 ProMOS Technologies Inc Check for Price DDR DRAM Module, 64MX72, 0.65ns, CMOS, LEAD FREE, DIMM-184 M312L6420ETS-CA2 vs V827464N24SCFX-D3
KMM383L6423AT-GY Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs KMM383L6423AT-GY
VR4CU647228EBK Viking Technology Check for Price DDR DRAM Module, 64MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 M312L6420ETS-CA2 vs VR4CU647228EBK
M381L6423BT1-LA0 Samsung Semiconductor Check for Price DDR DRAM Module, 64MX72, 0.8ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs M381L6423BT1-LA0
V827464N24SCEX-C0 ProMOS Technologies Inc Check for Price DDR DRAM Module, 64MX72, 0.7ns, CMOS, LEAD FREE, DIMM-184 M312L6420ETS-CA2 vs V827464N24SCEX-C0
HYS72D64300HBR-6-C Qimonda AG Check for Price DDR DRAM Module, 64MX72, 0.7ns, CMOS, GREEN, DIMM-184 M312L6420ETS-CA2 vs HYS72D64300HBR-6-C
MT9VDDF6472G-335XX Micron Technology Inc Check for Price DDR DRAM Module, 64MX72, 0.7ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs MT9VDDF6472G-335XX
HYMD264726AL8-M SK Hynix Inc Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs HYMD264726AL8-M
V827464K24SXTG-D3 Mosel Vitelic Corporation Check for Price DDR DRAM Module, 64MX72, 0.65ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs V827464K24SXTG-D3
V827464K24SXTG-B1 Mosel Vitelic Corporation Check for Price DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184 M312L6420ETS-CA2 vs V827464K24SXTG-B1