Part Details for M29DW323DB70N6E by STMicroelectronics
Results Overview of M29DW323DB70N6E by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
M29DW323DB70N6E Information
M29DW323DB70N6E by STMicroelectronics is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for M29DW323DB70N6E
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC | 16 |
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$9.6000 / $12.8000 | Buy Now |
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ComSIT USA | 32MBIT (4M BIT X 8 OR 2M BIT X 16, DUAL BANK 8:24, BOOT BLOCK) 3V SUPPLY FLASH MEMORY Flash, 2MX16, ... more ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 654 |
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RFQ |
Part Details for M29DW323DB70N6E
M29DW323DB70N6E CAD Models
M29DW323DB70N6E Part Data Attributes
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M29DW323DB70N6E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
M29DW323DB70N6E
STMicroelectronics
2MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TSOP | |
Package Description | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | |
Pin Count | 48 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | STMicroelectronics | |
Access Time-Max | 70 ns | |
Additional Feature | BOTTOM BOOT BLOCK | |
Alternate Memory Width | 8 | |
Boot Block | BOTTOM | |
Command User Interface | YES | |
Common Flash Interface | YES | |
Data Polling | YES | |
JESD-30 Code | R-PDSO-G48 | |
JESD-609 Code | e3/e6 | |
Length | 18.4 mm | |
Memory Density | 33554432 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Sectors/Size | 8,63 | |
Number of Terminals | 48 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 2MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP1 | |
Package Equivalence Code | TSSOP48,.8,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Ready/Busy | YES | |
Seated Height-Max | 1.2 mm | |
Sector Size | 8K,64K | |
Standby Current-Max | 0.0001 A | |
Supply Current-Max | 0.02 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN/TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Toggle Bit | YES | |
Type | NOR TYPE | |
Width | 12 mm |
Alternate Parts for M29DW323DB70N6E
This table gives cross-reference parts and alternative options found for M29DW323DB70N6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M29DW323DB70N6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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AM29DL320GT70EEN | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, TSOP-48 | M29DW323DB70N6E vs AM29DL320GT70EEN |
M28W320CB70N1T | STMicroelectronics | Check for Price | 2MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29DW323DB70N6E vs M28W320CB70N1T |
S29JL032H70TFI410 | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48 | M29DW323DB70N6E vs S29JL032H70TFI410 |
S29JL032H70TAI213 | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29DW323DB70N6E vs S29JL032H70TAI213 |
M28W320BB70N1 | STMicroelectronics | Check for Price | 2MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29DW323DB70N6E vs M28W320BB70N1 |
M29W320ET70N6E | STMicroelectronics | Check for Price | 2MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 | M29DW323DB70N6E vs M29W320ET70N6E |
S29JL032H70TAI023 | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29DW323DB70N6E vs S29JL032H70TAI023 |
M29W320ET70N1 | STMicroelectronics | Check for Price | 2MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | M29DW323DB70N6E vs M29W320ET70N1 |
S29JL032H70TAI020 | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, MO-142DD, TSOP-48 | M29DW323DB70N6E vs S29JL032H70TAI020 |
AM29DL320GT70EIN | AMD | Check for Price | Flash, 2MX16, 70ns, PDSO48, TSOP-48 | M29DW323DB70N6E vs AM29DL320GT70EIN |
M29DW323DB70N6E Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the M29DW323DB70N6E is 2.7V to 3.6V.
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The hold signal (HOLD#) should be asserted low to pause the current operation and de-asserted high to resume the operation.
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The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is low, the device is in write-protect mode, and no writes are allowed.
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To perform a sector erase, send the sector erase command (0x20) followed by the address of the sector to be erased. The device will then erase the entire sector.
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The M29DW323DB70N6E has a maximum of 100,000 erase cycles per sector.